MRF6S21140HR3 MRF6S21140HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN--PCS/cellular radio and WLL
applications.
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Typical 2--carrier W--CDMA Performance: VDD
=28Volts,IDQ
= 1200 mA,
Pout
= 30 Watts Avg., f = 2112.5 MHz, Channel Bandwidth = 3.84 MHz,
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain ? 15.5 dB
Drain Efficiency ? 27.5%
IM3 @ 10 MHz Offset ? --37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset ? --41 dBc in 3.84 MHz Channel Bandwidth
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Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 140 Watts CW
Output Power
Features
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Characterized with Series Equivalent Large--Signal Impedance Parameters
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Internally Matched for Ease of Use
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Qualified Up to a Maximum of 32 VDD
Operation
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Integrated ESD Protection
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Optimized for Doherty Applications
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RoHS Compliant
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In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +68
Vdc
Gate--Source Voltage
VGS
--0.5, +12
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
(1,2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 140 W CW
Case Temperature 75°C, 30 W CW
RθJC
0.35
0.38
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955/D,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
Document Number: MRF6S21140H
Rev. 5, 2/2010
Freescale Semiconductor
Technical Data
MRF6S21140HR3
MRF6S21140HSR3
2110--2170 MHz, 30 W AVG., 28 V
2xW--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465C--02, STYLE 1
NI--880S
MRF6S21140HSR3
CASE 465B--03, STYLE 1
NI--880
MRF6S21140HR3
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Freescale Semiconductor, Inc., 2004--2007, 2010.
All rights reserved.
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